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| (R) STTH20004TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) Features and benefits Up to 2 x 120 A 400 V 150C 0.83 V 60 ns A1 A2 K1 K2 K1 A1 K2 A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses ISOTOP STTH20004TV1 Description The STTH20004TV1 uses ST new 400V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 2: Order codes Part number STTH20004TV1 Marking STTH20004TV1 Table 3: Absolute ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Tc = 90 C = 0.5 Tc = 73 C = 0.5 Storage temperature range Maximum operating junction temperature Per diode Per diode Parameter Repetitive peak reverse voltage Value 400 200 100 120 900 -55 to + 150 150 A C C Unit V A A Surge non repetitive forward current tp = 10 ms sinusoidal October 2005 REV. 1 1/6 STTH20004TV Table 4: Thermal resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 0.50 0.30 0.10 C/W Unit C/W When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static electrical characteristics (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 100 IF = 100 A 0.83 Min. Typ Max. 100 1000 1.2 1.0 V Unit A Reverse leakage current Tj = 25 C Tj = 125 C Forward voltage drop Tj = 25 C Tj = 150 C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.002 IF (RMS) 2 Table 6: Dynamic characteristics (per diode) Symbol trr Parameter Reverse recovery Tj = 25 C time Test conditions IF = 1 A dIF/dt = 50 A/s VR = 30 V IF = 1 A dIF/dt = 200 A/s VR = 30 V Min Typ Max Unit 75 45 100 60 18 0.4 800 2.6 ns V A ns IRM Sfactor tfr VFP Reverse recovery Tj = 125 C IF = 100 A VR = 200 V current dIF/dt = 100 A/s Softness factor Tj = 125 C IF = 100 A VR = 200 V dIF/dt = 100 A/s IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax Forward recovery Tj = 25 C time Forward recovery Tj = 25 C voltage 2/6 STTH20004TV Figure 1: Conduction losses versus average forward current (per diode) P(W) 180 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 T =0.05 =0.1 =0.5 =0.2 =1 Figure 2: Forward voltage drop versus forward current (per diode) 200 180 160 140 120 100 80 60 40 Tj=25C (Maximum values) Tj=150C (Typical values) Tj=150C (Maximum values) I FM (A) I F(AV) (A) 70 80 =tp/T tp 20 0 0.0 VFM (V) 0.2 0.4 0.6 0.8 1.0 90 100 110 120 130 140 150 1.2 1.4 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth( j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 Single pulse Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM (A) IF=IF(AV) VR=200V Tj=125C 50 45 40 35 30 25 20 15 10 t P (s) 1.E-02 1.E-01 1.E+00 1.E+01 5 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) t rr (ns) 300 IF=IF(AV) VR=200V Tj=125C Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) Q rr (nC) 3500 3000 2500 2000 IF=IF(AV) VR=200V Tj=125C 250 200 150 1500 100 1000 50 500 0 0 50 100 150 dIF/dt(A/s) 0 200 250 300 350 400 450 500 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH20004TV Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) 0.8 0.7 0.6 1.0 0.5 0.8 0.4 0.6 0.3 0.4 0.2 0.2 0.1 0.0 0 50 100 150 IRM QRR IF=IF(AV) VR=200V Reference: Tj=125C tRR Figure 8: Relative variations of dynamic parameters versus junction temperature 1.6 1.4 1.2 SFACTOR S FACTOR IF < 2 x IF(AV) VR=200V Tj=125C Tj (C) 50 75 dIF/dt(A/s) 200 250 300 350 400 450 500 0.0 25 100 125 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) 1800 1600 1400 1200 1000 800 600 400 IF=IF(AV) VFR=1.1 x VF max. Tj=125C VFP (V) IF=IF(AV) Tj=125C dIF/dt(A/s) 200 0 0 50 100 150 dIF /dt(A/s) 200 250 300 350 400 450 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25C 1000 VR(V) 100 1 10 100 1000 4/6 STTH20004TV Figure 12: ISOTOP Package mechanical data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193 REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering information Ordering type STTH20004TV1 Marking STTH20004TV1 Package ISOTOP Weight 27 g (without screws) Base qty 10 (with screws) Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 8: Revision history Date 18-Oct-2005 Revision 1 First issue Description of Changes 5/6 STTH20004TV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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